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  • IC型号
  • 描述
  • 厂家
  • 页数
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  • 1
  • UPA809TF
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON HIGH FREQUENCY TRANSISTOR
  • 1页
  • 15K
  • 2
  • uPA809T-T1
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 10页
  • 55K
  • 3
  • uPA809T-T1
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 10页
  • 55K
  • 4
  • UPA809T-T1
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON HIGH FREQUENCY TRANSISTOR
  • 5页
  • 35K
  • 5
  • uPA809T
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 10页
  • 55K
  • 6
  • uPA809T
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 10页
  • 55K
  • 7
  • uPA808TKB-T1
  • NEC Corporation
  • Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Super Mini
  • 12页
  • 55K
  • 8
  • uPA808TKB
  • NEC Corporation
  • Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Super Mini
  • 12页
  • 55K
  • 9
  • uPA808TC-T1
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
  • 16页
  • 89K
  • 10
  • uPA808TC
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
  • 16页
  • 89K
  • 11
  • UPA808TC
  • NEC Electronics, Inc.
  • NPN SILICON HIGH FREQUENCY TRANSISTOR
  • 3页
  • 32K
  • 12
  • uPA808T-T1
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI
  • 12页
  • 55K
  • 13
  • UPA808T-T1
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON HIGH FREQUENCY TRANSISTOR
  • 9页
  • 51K
  • 14
  • uPA808T
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI
  • 12页
  • 55K
  • 15
  • uPA807TKB-T1
  • NEC Corporation
  • Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Super Mini
  • 8页
  • 48K
  • 16
  • uPA807TKB
  • NEC Corporation
  • Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Super Mini
  • 8页
  • 48K
  • 17
  • UPA807T-T1
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON HIGH FREQUENCY TRANSISTOR
  • 11页
  • 100K
  • 18
  • uPA807T-T1
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI
  • 8页
  • 48K
  • 19
  • uPA807T
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI
  • 8页
  • 48K
  • 20
  • uPA806TKB-T1
  • NEC Corporation
  • Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold
  • 6页
  • 42K
  • 21
  • uPA806TKB
  • NEC Corporation
  • Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold
  • 6页
  • 42K
  • 22
  • UPA806T-T1
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON HIGH FREQUENCY TRANSISTOR
  • 9页
  • 64K
  • 23
  • uPA806T-T1
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 6页
  • 42K
  • 24
  • uPA806T
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 6页
  • 42K
  • 25
  • uPA805T-T1
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 6页
  • 38K
  • 26
  • uPA805T-T1
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 6页
  • 38K
  • 27
  • uPA805T
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 6页
  • 38K
  • 28
  • uPA805T
  • NEC Electronics, Inc.
  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 6页
  • 38K
  • 29
  • uPA804TGB-T1
  • NEC Corporation
  • NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold
  • 8页
  • 50K
  • 30
  • uPA804TGB
  • NEC Corporation
  • NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold
  • 8页
  • 50K
  • 31
  • uPA804TFB-T1
  • NEC Corporation
  • NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold
  • 8页
  • 50K
  • 32
  • uPA804TFB
  • NEC Corporation
  • NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold
  • 8页
  • 50K
  • 33
  • uPA804TC-T1
  • NEC Electronics, Inc.
  • NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC5004) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER M
  • 16页
  • 66K
  • 34
  • uPA804TC
  • NEC Electronics, Inc.
  • NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC5004) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER M
  • 16页
  • 66K
  • 35
  • uPA804T-T1
  • NEC Electronics, Inc.
  • NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 8页
  • 50K
  • 36
  • uPA804T
  • NEC Electronics, Inc.
  • NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 8页
  • 50K
  • 37
  • uPA803T-T1
  • NEC Electronics, Inc.
  • NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 8页
  • 51K
  • 38
  • uPA803T
  • NEC Electronics, Inc.
  • NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
  • 8页
  • 51K
  • 39
  • uPA802TGB-T1
  • NEC Corporation
  • High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini
  • 6页
  • 45K
  • 40
  • uPA802TGB
  • NEC Corporation
  • High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini
  • 6页
  • 45K
  • 41
  • uPA802TFB-T1
  • NEC Corporation
  • High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini
  • 6页
  • 45K
  • 42
  • uPA802TFB
  • NEC Corporation
  • High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini
  • 6页
  • 45K
  • 43
  • uPA802TC-T1
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
  • 22页
  • 110K
  • 44
  • uPA802TC
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
  • 22页
  • 110K
  • 45
  • UPA802T-T1
  • NEC Compound Semiconductor Devices, Ltd.
  • NPN SILICON HIGH FREQUENCY TRANSISTOR
  • 9页
  • 74K
  • 46
  • uPA802T-T1
  • NEC Electronics, Inc.
  • HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI
  • 6页
  • 45K
  • 47
  • uPA802T
  • NEC Electronics, Inc.
  • HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI
  • 6页
  • 45K
  • 48
  • uPA801TGB-T1
  • NEC Corporation
  • High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-pin 2 Elements)
  • 6页
  • 45K
  • 49
  • uPA801TGB
  • NEC Corporation
  • High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-pin 2 Elements)
  • 6页
  • 45K
  • 50
  • uPA801TFB-T1
  • NEC Corporation
  • High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-pin 2 Elements)
  • 6页
  • 45K
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