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  • IC型号
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  • 101
  • NE5520279A-T1
  • NEC Corporation
  • 3.2 V Operation Silicon RF Power LDMOS FET for 1.8 GHz 1.6 W Transmission Amplifiers
  • 9页
  • 66K
  • 102
  • NE5517N
  • Philips Semiconductors
  • Dual Operational Transconductance Amplifiers
  • 18页
  • 193K
  • 103
  • NE5517D
  • Philips Semiconductors
  • Dual Operational Transconductance Amplifiers
  • 18页
  • 193K
  • 104
  • NE5517AN
  • Philips Semiconductors
  • Dual Operational Transconductance Amplifiers
  • 18页
  • 193K
  • 105
  • NE5514N
  • Philips Semiconductors
  • Quad high-performance operational amplifier
  • 3页
  • 54K
  • 106
  • NE5514N
  • Philips Semiconductors
  • Quad high-performance operational amplifier
  • 4页
  • 60K
  • 107
  • NE5514D
  • Philips Semiconductors
  • Quad high-performance operational amplifier
  • 3页
  • 54K
  • 108
  • NE5514D
  • Philips Semiconductors
  • Quad high-performance operational amplifier
  • 4页
  • 60K
  • 109
  • NE5512N
  • Philips Semiconductors
  • Dual high-performance operational amplifier
  • 4页
  • 53K
  • 110
  • NE5512D
  • Philips Semiconductors
  • Dual high-performance operational amplifier
  • 4页
  • 53K
  • 111
  • NE5511279A-T1A
  • NEC Corporation
  • 7.5 V Operation Silicon RF Power LD-MOS FET for UHF-Band 10 W Transmission Amplifiers
  • 8页
  • 48K
  • 112
  • NE5511279A-T1
  • NEC Corporation
  • 7.5 V Operation Silicon RF Power LD-MOS FET for UHF-Band 10 W Transmission Amplifiers
  • 8页
  • 48K
  • 113
  • NE5510379A-T1
  • NEC Electronics, Inc.
  • 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIER
  • 8页
  • 57K
  • 114
  • NE5510279A-T1
  • NEC Corporation
  • 4.8 V Operation Silicon RF Power LDMOS FET for 1.8 GHz 2 W Transmission Amplifiers
  • 10页
  • 60K
  • 115
  • NE5510179A-T1
  • NEC Electronics, Inc.
  • 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIER
  • 8页
  • 60K
  • 116
  • NE5510179A-T1
  • NEC Compound Semiconductor Devices, Ltd.
  • 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIER
  • 4页
  • 40K
  • 117
  • NE5500479A-T1
  • NEC Corporation
  • 3.5 V Operation Silicon RF Power LDMOS FET for 900 MHz 1 W Transmission Amplifiers
  • 2页
  • 33K
  • 118
  • NE5500179A-T1
  • NEC Corporation
  • 4.8 V Operation Silicon RF Power LDMOS FET for 1.9 GHz 1 W Transmission Amplifiers
  • 11页
  • 67K
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