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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • K4S641632F-TL75
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 4
  • K4S641632F-TL70
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 5
  • K4S641632F-TL60
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 8
  • K4S641632F-TL55
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 10
  • K4S641632F-TL50
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 11
  • K4S641632F-TL1L
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 14
  • K4S641632F-TL1H
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 16
  • K4S641632F-TC75
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 18
  • K4S641632F-TC70
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 20
  • K4S641632F-TC60
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 22
  • K4S641632F-TC55
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 24
  • K4S641632F-TC50
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 26
  • K4S641632F-TC1L
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
  • 28
  • K4S641632F-TC1H
  • Samsung Semiconductor, Inc.
  • 1M x 16Bit x 4 Banks Synchronous DRAM
  • 11页
  • 133K
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