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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • K4S561632E-TL75
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks SDRAM
  • 14页
  • 196K
  • 2
  • K4S561632E-TL60
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks SDRAM
  • 14页
  • 196K
  • 3
  • K4S561632E-TC75
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks SDRAM
  • 14页
  • 196K
  • 4
  • K4S561632E-TC60
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks SDRAM
  • 14页
  • 196K
  • 5
  • K4S561632D-TL7C
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 60K
  • 6
  • K4S561632D-TL75
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 60K
  • 7
  • K4S561632D-TL60
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 60K
  • 8
  • K4S561632D-TL1L
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 60K
  • 9
  • K4S561632D-TL1H
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 60K
  • 10
  • K4S561632D-TC7C
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 60K
  • 11
  • K4S561632D-TC75
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 60K
  • 12
  • K4S561632D-TC60
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 60K
  • 13
  • K4S561632D-TC1L
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 60K
  • 14
  • K4S561632D-TC1H
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 60K
  • 15
  • K4S561632D-NL7C
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 9页
  • 46K
  • 16
  • K4S561632D-NL75
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 9页
  • 46K
  • 17
  • K4S561632D-NL60
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 9页
  • 46K
  • 18
  • K4S561632D-NL1L
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 9页
  • 46K
  • 19
  • K4S561632D-NL1H
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 9页
  • 46K
  • 20
  • K4S561632D-NC7C
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 9页
  • 46K
  • 21
  • K4S561632D-NC75
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 9页
  • 46K
  • 22
  • K4S561632D-NC60
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 9页
  • 46K
  • 23
  • K4S561632D-NC1L
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 9页
  • 46K
  • 24
  • K4S561632D-NC1H
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 9页
  • 46K
  • 35
  • K4S561632C-TL7C
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 114K
  • 36
  • K4S561632C-TL75
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 114K
  • 37
  • K4S561632C-TL60
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 114K
  • 38
  • K4S561632C-TL1L
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 114K
  • 39
  • K4S561632C-TL1H
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 114K
  • 50
  • K4S561632C-TC7C
  • Samsung Semiconductor, Inc.
  • 4M x 16 Bit x 4 Banks Synchronous DRAM
  • 11页
  • 114K
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