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  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • K4S161622D-TC80
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 2
  • K4S161622D-TC70
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 3
  • K4S161622D-TC60
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 4
  • K4S161622D-TC55
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 5
  • K4S161622D-TC10
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 6
  • K4S161622D-TC/L80
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 41页
  • 1127K
  • 7
  • K4S161622D-TC/L70
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 41页
  • 1127K
  • 8
  • K4S161622D-TC/L60
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 41页
  • 1127K
  • 9
  • K4S161622D-TC/L55
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 41页
  • 1127K
  • 10
  • K4S161622D-TC/L10
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 41页
  • 1127K
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