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  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • K4S161622D-TP80
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM Industrial Temperature
  • 43页
  • 1091K
  • 2
  • K4S161622D-TP70
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM Industrial Temperature
  • 43页
  • 1091K
  • 3
  • K4S161622D-TP60
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM Industrial Temperature
  • 43页
  • 1091K
  • 4
  • K4S161622D-TP10
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM Industrial Temperature
  • 43页
  • 1091K
  • 5
  • K4S161622D-TL80
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 6
  • K4S161622D-TL70
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 7
  • K4S161622D-TL60
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 8
  • K4S161622D-TL55
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 9
  • K4S161622D-TL10
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 10
  • K4S161622D-TI80
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 11
  • K4S161622D-TI70
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 12
  • K4S161622D-TI60
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 13
  • K4S161622D-TI55
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 14
  • K4S161622D-TI50
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 15
  • K4S161622D-TI10
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 16
  • K4S161622D-TE80
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 17
  • K4S161622D-TE70
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 18
  • K4S161622D-TE60
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 19
  • K4S161622D-TE55
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 20
  • K4S161622D-TE50
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 21
  • K4S161622D-TE10
  • Samsung Semiconductor, Inc.
  • 512k x 16 Bit x 2 Banks Synchronous DRAM
  • 43页
  • 680K
  • 22
  • K4S161622D-TC80
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 23
  • K4S161622D-TC70
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 24
  • K4S161622D-TC60
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 25
  • K4S161622D-TC55
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 26
  • K4S161622D-TC10
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 43页
  • 1125K
  • 27
  • K4S161622D-TC/L80
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 41页
  • 1127K
  • 28
  • K4S161622D-TC/L70
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 41页
  • 1127K
  • 29
  • K4S161622D-TC/L60
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 41页
  • 1127K
  • 30
  • K4S161622D-TC/L55
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 41页
  • 1127K
  • 31
  • K4S161622D-TC/L10
  • Samsung Semiconductor, Inc.
  • 512K x 16Bit x 2 Banks Synchronous DRAM
  • 41页
  • 1127K
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