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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • IRG4RC10UTRR
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 131K
  • 2
  • IRG4RC10UTR
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 131K
  • 3
  • IRG4RC10UDTRR
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  • 10页
  • 191K
  • 4
  • IRG4RC10UDTRL
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  • 10页
  • 191K
  • 5
  • IRG4RC10UDTR
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  • 10页
  • 191K
  • 6
  • IRG4RC10UD
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  • 10页
  • 191K
  • 7
  • IRG4RC10U
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 131K
  • 8
  • IRG4RC10STRR
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 120K
  • 9
  • IRG4RC10STRL
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 120K
  • 10
  • IRG4RC10STR
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 120K
  • 11
  • IRG4RC10SDTRR
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  • 10页
  • 189K
  • 12
  • IRG4RC10SDTRL
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  • 10页
  • 189K
  • 13
  • IRG4RC10SDTR
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  • 10页
  • 189K
  • 14
  • IRG4RC10SD
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  • 10页
  • 189K
  • 15
  • IRG4RC10S
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 120K
  • 16
  • IRG4RC10KTRR
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 134K
  • 17
  • IRG4RC10KTRL
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 134K
  • 18
  • IRG4RC10KTR
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 134K
  • 19
  • IRG4RC10KD
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  • 10页
  • 190K
  • 20
  • IRG4RC10K
  • International Rectifier Corp.
  • Insulated Gate Bipolar Transistor
  • 8页
  • 134K
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