• 1
• irg4bc30kds
• 页
• 225K

• 2
• IRG4BC30W-S
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 8页
• 188K

• 3
• IRG4BC30W
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 8页
• 139K

• 4
• IRG4BC30UD
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
• 10页
• 234K

• 5
• IRG4BC30U-S
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 8页
• 308K

• 6
• IRG4BC30U
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 8页
• 167K

• 7
• IRG4BC30S-S
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 9页
• 152K

• 8
• IRG4BC30S
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 8页
• 161K

• 9
• IRG4BC30KD-STRR
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
• 10页
• 225K

• 10
• IRG4BC30KD-STRL
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
• 10页
• 225K

• 11
• IRG4BC30KD-S
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
• 10页
• 225K

• 12
• IRG4BC30KD
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
• 10页
• 196K

• 13
• IRG4BC30K-STRR
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 8页
• 161K

• 14
• IRG4BC30K-S
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 8页
• 161K

• 15
• IRG4BC30K
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 8页
• 137K

• 16
• IRG4BC30FD1
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor with Hyperfast Diode
• 10页
• 362K

• 17
• IRG4BC30FD
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
• 10页
• 412K

• 18
• IRG4BC30F
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor
• 8页
• 167K

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