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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 51
  • BCR148W
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 52
  • BCR148U
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 44K
  • 53
  • BCR148T
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 41K
  • 54
  • BCR148S
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 44K
  • 55
  • BCR148
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 56
  • BCR146W
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 57
  • BCR146
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 58
  • BCR142W
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 59
  • BCR142T
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 60
  • BCR142
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 61
  • BCR141W
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 62
  • BCR141U
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 114K
  • 63
  • BCR141T
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 41K
  • 64
  • BCR141S
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 43K
  • 65
  • BCR141
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 66
  • BCR139
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 43K
  • 67
  • BCR135W
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 68
  • BCR135T
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 41K
  • 69
  • BCR135S
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 43K
  • 70
  • BCR135
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 71
  • BCR133W
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 72
  • BCR133U
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 115K
  • 73
  • BCR133T
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 41K
  • 74
  • BCR133S
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 43K
  • 75
  • BCR133
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 76
  • BCR12UM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
  • 5页
  • 56K
  • 77
  • BCR12PM-14
  • Renesas Technology America, Inc.
  • Medium Power Use Insulated Type, Planar Passivation Type Triac
  • 6页
  • 205K
  • 78
  • BCR12PM-12
  • Renesas Technology America, Inc.
  • Medium Power Use Insulated Type, Planar Passivation Type Triac
  • 12页
  • 466K
  • 79
  • BCR12PM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 130K
  • 80
  • BCR12KM-14
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
  • 2页
  • 31K
  • 81
  • BCR12CS-12
  • Renesas Technology America, Inc.
  • Medium Power Use Non-Insulated Type, Planar Passivation Type Triac
  • 12页
  • 391K
  • 82
  • BCR12CS
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 122K
  • 83
  • BCR12CM-12
  • Renesas Technology America, Inc.
  • Medium Power Use Non-Insulated Type, Planar Passivation Type Triac
  • 12页
  • 409K
  • 84
  • BCR12CM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 127K
  • 85
  • BCR129T
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 41K
  • 86
  • BCR129S
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 42K
  • 87
  • BCR129
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 88
  • BCR119W
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 41K
  • 89
  • BCR119S
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 43K
  • 90
  • BCR119
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 91
  • BCR116W
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 92
  • BCR116S
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor Array
  • 4页
  • 115K
  • 93
  • BCR116
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 94
  • BCR112W
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 95
  • BCR112
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 42K
  • 96
  • BCR10UM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
  • 5页
  • 55K
  • 97
  • BCR10PN
  • Infineon Technologies Corporation
  • NPN/PNP Silicon Digital Transistor Array
  • 5页
  • 51K
  • 98
  • BCR10PM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 130K
  • 99
  • BCR10CS
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 121K
  • 100
  • BCR10CM-12
  • Renesas Technology America, Inc.
  • Medium Power Use Non-Insulated Type, Planar Passivation Type Triac
  • 12页
  • 414K
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