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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 6
  • 2SK2998
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)
  • 5页
  • 253K
  • 7
  • 2SK2996
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)
  • 5页
  • 313K
  • 8
  • 2SK2995
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)
  • 5页
  • 296K
  • 9
  • 2SK2993(SM)
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)
  • 5页
  • 290K
  • 10
  • 2SK2993
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)
  • 5页
  • 290K
  • 11
  • 2SK2992
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type
  • 5页
  • 278K
  • 12
  • 2SK2991(SM)
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)
  • 5页
  • 297K
  • 13
  • 2SK2991
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)
  • 5页
  • 297K
  • 14
  • 2SK2989
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS VI)
  • 2页
  • 125K
  • 15
  • 2SK2987
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
  • 5页
  • 303K
  • 16
  • 2SK2986(SM)
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
  • 5页
  • 298K
  • 17
  • 2SK2986
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
  • 5页
  • 298K
  • 18
  • 2SK2985
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
  • 5页
  • 300K
  • 19
  • 2SK2984-ZJ
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 64K
  • 20
  • 2SK2984-S
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 64K
  • 21
  • 2SK2984
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 64K
  • 22
  • 2SK2983-ZJ
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 65K
  • 23
  • 2SK2983-S
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 65K
  • 24
  • 2SK2983
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 65K
  • 25
  • 2SK2982-Z
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 60K
  • 26
  • 2SK2982
  • NEC Electron Devices
  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  • 8页
  • 60K
  • 27
  • 2SK2980
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 43K
  • 28
  • 2SK2978
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 42K
  • 29
  • 2SK2977LS
  • Sanyo Semiconductor Corporation
  • N-Channel Silicon MOSFET
  • 4页
  • 42K
  • 30
  • 2SK2975
  • Mitsubishi Electric Corporation
  • RF POWER MOS FET
  • 3页
  • 29K
  • 31
  • 2SK2974
  • Mitsubishi Electric Corporation
  • RF POWER MOS FET
  • 3页
  • 29K
  • 32
  • 2SK2973
  • Mitsubishi Electric Corporation
  • RF POWER MOS FET
  • 3页
  • 33K
  • 33
  • 2SK2969
  • Sanyo Semiconductor Corporation
  • N-Channel Silicon MOSFET
  • 4页
  • 172K
  • 34
  • 2SK2968
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III)
  • 5页
  • 289K
  • 35
  • 2SK2967
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)
  • 5页
  • 289K
  • 36
  • 2SK2965
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type
  • 2页
  • 133K
  • 37
  • 2SK2964
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type
  • 5页
  • 286K
  • 38
  • 2SK2963
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type
  • 5页
  • 292K
  • 39
  • 2SK2962
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type
  • 5页
  • 292K
  • 40
  • 2SK2961
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type
  • 5页
  • 292K
  • 41
  • 2SK2959
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 48K
  • 42
  • 2SK2958S
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 51K
  • 43
  • 2SK2958L
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 51K
  • 44
  • 2SK2957S
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 50K
  • 45
  • 2SK2957L
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 50K
  • 46
  • 2SK2956
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 46K
  • 47
  • 2SK2955
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 51K
  • 48
  • 2SK2954-MR
  • Fuji Electric Holdings Co., Ltd.
  • Power MOSFET
  • 10页
  • 191K
  • 49
  • 2SK2953
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type
  • 5页
  • 302K
  • 50
  • 2SK2952
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type
  • 5页
  • 292K
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