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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 51
  • 2SK2744
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)
  • 2页
  • 140K
  • 52
  • 2SK2742
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Power (L, 2)-Pi-MOS V)
  • 5页
  • 282K
  • 53
  • 2SK2741
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Power (L, 2)-Pi-MOS V)
  • 2页
  • 136K
  • 54
  • 2SK2740
  • ROHM CO., LTD.
  • Transistor
  • 4页
  • 143K
  • 55
  • 2SK2738
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 10页
  • 49K
  • 56
  • 2SK2737
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 47K
  • 57
  • 2SK2736
  • Renesas Technology America, Inc.
  • Silicon N Channel DV-L MOS FET High Speed Power Switching
  • 7页
  • 34K
  • 58
  • 2SK2735S
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 7页
  • 39K
  • 59
  • 2SK2735L
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 7页
  • 39K
  • 60
  • 2SK2734
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 9页
  • 46K
  • 61
  • 2SK2733
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III)
  • 5页
  • 304K
  • 62
  • 2SK2731T146
  • ROHM CO., LTD.
  • Interface and Switching (30 V, 200 mA)
  • 4页
  • 112K
  • 63
  • 2SK2731
  • ROHM CO., LTD.
  • Interface and switching (30V, 200mA)
  • 4页
  • 112K
  • 64
  • 2SK2730
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 10页
  • 51K
  • 65
  • 2SK2729
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 10页
  • 51K
  • 66
  • 2SK2728
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 10页
  • 51K
  • 67
  • 2SK2727
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 8页
  • 41K
  • 68
  • 2SK2726
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 10页
  • 49K
  • 69
  • 2SK2725
  • Renesas Technology America, Inc.
  • Silicon N Channel MOS FET High Speed Power Switching
  • 10页
  • 49K
  • 70
  • 2SK2724
  • NEC Corporation
  • Switching N-Channel Power MOS FET Industrial Use
  • 8页
  • 83K
  • 71
  • 2SK2723
  • NEC Corporation
  • Switching N-Channel Power MOS FET Industrial Use
  • 8页
  • 83K
  • 72
  • 2SK2719
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III)
  • 5页
  • 303K
  • 73
  • 2SK2718
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III)
  • 5页
  • 301K
  • 74
  • 2SK2717
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III)
  • 5页
  • 283K
  • 75
  • 2SK2715TL
  • ROHM CO., LTD.
  • Transistor
  • 4页
  • 138K
  • 76
  • 2SK2715
  • ROHM CO., LTD.
  • Small switching (500V, 2A)
  • 4页
  • 86K
  • 77
  • 2SK2713
  • ROHM CO., LTD.
  • Transistor
  • 4页
  • 143K
  • 78
  • 2SK2700
  • Toshiba America, Inc.
  • Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III)
  • 5页
  • 307K
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