• 1
• 2SC3345
• 页
• 237K

• 2
• 2SC3399
• Sanyo Semiconductor Corporation
• NPN Epitaxial Planar Silicon Transistor
• 2页
• 86K

• 3
• 2SC3393
• Sanyo Semiconductor Corporation
• NPN Epitaxial Planar Silicon Transistor
• 5页
• 50K

• 4
• 2SC3392
• Sanyo Semiconductor Corporation
• NPN Epitaxial Planar Silicon Transistor
• 5页
• 50K

• 5
• 2SC3391C
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial Planar Transistor
• 7页
• 38K

• 6
• 2SC3391B
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial Planar Transistor
• 7页
• 38K

• 7
• 2SC3391
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial Planar
• 5页
• 24K

• 8
• 2SC3391
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial Planar
• 5页
• 23K

• 9
• 2SC3390C
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial Transistor
• 7页
• 38K

• 10
• 2SC3390B
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial Transistor
• 7页
• 38K

• 11
• 2SC3390
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial
• 5页
• 23K

• 12
• 2SC3383
• Sanyo Semiconductor Corporation
• NPN Epitaxial Planar Silicon Transistor
• 4页
• 44K

• 13
• 2SC3382
• Sanyo Semiconductor Corporation
• NPN Epitaxial Planar Silicon Transistor
• 5页
• 236K

• 14
• 2SC3381
• Toshiba America, Inc.
• TRANSISTOR SILICON NPN EPITAXIAL TYPE (MONOLITHIC DUAL TYPE)
• 4页
• 230K

• 15
• 2SC3381
• Toshiba America, Inc.
• TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
• 3页
• 211K

• 16
• 2SC3380
• Renesas Technology America, Inc.
• Silicon NPN Triple Diffused
• 8页
• 44K

• 17
• 2SC3379
• Mitsubishi Electric Corporation
• NPN EPITAIAL PLANAR TYPE
• 3页
• 150K

• 18
• 2SC3376
• Toshiba America, Inc.
• SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTOR
• 4页
• 214K

• 19
• 2SC3365
• Renesas Technology America, Inc.
• Silicon NPN Triple Diffused
• 9页
• 48K

• 20
• 2SC3361
• Sanyo Semiconductor Corporation
• NPN Epitaxial Planar Silicon Transistor
• 4页
• 45K

• 21
• 2SC3360N17
• NEC Corporation
• High Voltage Amplifier and Switching NPN Silicon Epitaxial Transistor Mini Mold
• 10页
• 51K

• 22
• 2SC3360N16
• NEC Corporation
• High Voltage Amplifier and Switching NPN Silicon Epitaxial Transistor Mini Mold
• 10页
• 51K

• 23
• 2SC3360N15
• NEC Corporation
• High Voltage Amplifier and Switching NPN Silicon Epitaxial Transistor Mini Mold
• 10页
• 51K

• 24
• 2SC3360
• NEC Electronics, Inc.
• SILICON TRANSISTOR
• 4页
• 194K

• 25
• 2SC3359STPR
• ROHM CO., LTD.
• Power Transistor (80 V, 0.3 A)
• 1页
• 35K

• 26
• 2SC3359STPQ
• ROHM CO., LTD.
• Power Transistor (80 V, 0.3 A)
• 1页
• 35K

• 27
• 2SC3359S
• ROHM CO., LTD.
• Power Transistor(80V, 0.3A)
• 1页
• 35K

• 28
• 2SC3357RH-T1
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold
• 8页
• 86K

• 29
• 2SC3357RH
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold
• 8页
• 86K

• 30
• 2SC3357RF-T1
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold
• 8页
• 86K

• 31
• 2SC3357RF
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold
• 8页
• 86K

• 32
• 2SC3357RE-T1
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold
• 8页
• 86K

• 33
• 2SC3357RE
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-Pin Power Minimold
• 8页
• 86K

• 34
• 2SC3357
• NEC Electronics, Inc.
• NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
• 8页
• 77K

• 35
• 2SC3357
• NEC Electronics, Inc.
• NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
• 8页
• 77K

• 36
• 2SC3356S-T1
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-Pin Minimold
• 8页
• 83K

• 37
• 2SC3356S
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-Pin Minimold
• 8页
• 83K

• 38
• 2SC3356R-T1
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-Pin Minimold
• 8页
• 83K

• 39
• 2SC3356R
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-Pin Minimold
• 8页
• 83K

• 40
• 2SC3356Q-T1
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-Pin Minimold
• 8页
• 83K

• 41
• 2SC3356Q
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-Pin Minimold
• 8页
• 83K

• 42
• 2SC3356
• NEC Electronics, Inc.
• SILICON TRANSISTOR
• 8页
• 91K

• 43
• 2SC3356
• NEC Electronics, Inc.
• MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
• 8页
• 91K

• 44
• 2SC3355K-T
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification
• 8页
• 84K

• 45
• 2SC3355K
• NEC Corporation
• NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification
• 8页
• 84K

• 46
• 2SC3355
• NEC Electronics, Inc.
• HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
• 8页
• 90K

• 47
• 2SC3354T
• Panasonic Industrial Sales (Taiwan) Co., Ltd.
• Silicon NPN Epitaxial Planar Type Transistor
• 4页
• 92K

• 48
• 2SC3354S
• Panasonic Industrial Sales (Taiwan) Co., Ltd.
• Silicon NPN Epitaxial Planar Type Transistor
• 4页
• 92K

• 49
• 2SC3354
• 松下資訊科技
• Silicon NPN epitaxial planer type
• 4页
• 58K

• 50
• 2SC3338
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial
• 5页
• 24K

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