• 451
• IRG4IBC10UD
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
• 10页
• 180K

• 452
• IRGIB15B60KD1
• International Rectifier Corp.
• Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
• 12页
• 278K

• 453
• IRU1010CD
• International Rectifier Corp.
• 1 A Low Dropout Positive Adjustable Regulator
• 10页
• 66K

• 454
• IRU1010CDTR
• International Rectifier Corp.
• 1 A Low Dropout Positive Adjustable Regulator
• 10页
• 66K

• 455
• IRU1010CP
• International Rectifier Corp.
• 1 A Low Dropout Positive Adjustable Regulator
• 10页
• 66K

• 456
• IRU1010CPTR
• International Rectifier Corp.
• 1 A Low Dropout Positive Adjustable Regulator
• 10页
• 66K

• 457
• IRU1010CS
• International Rectifier Corp.
• 1 A Low Dropout Positive Adjustable Regulator
• 10页
• 66K

• 458
• IRU1010CSTR
• International Rectifier Corp.
• 1 A Low Dropout Positive Adjustable Regulator
• 10页
• 66K

• 459
• IRU1010CY
• International Rectifier Corp.
• 1 A Low Dropout Positive Adjustable Regulator
• 10页
• 66K

• 460
• IRU1010CYTR
• International Rectifier Corp.
• 1 A Low Dropout Positive Adjustable Regulator
• 10页
• 66K

• 461
• IS61LV6424-10TQ
• Integrated Circuit Solution Inc.
• 64k x 24 High-Speed CMOS Static RAM with 3.3 V Supply
• 页
• K

• 462
• IS61LV6424-12TQ
• Integrated Circuit Solution Inc.
• 64k x 24 High-Speed CMOS Static RAM with 3.3 V Supply
• 页
• K

• 463
• IS61LV6424-15TQ
• Integrated Circuit Solution Inc.
• 64k x 24 High-Speed CMOS Static RAM with 3.3 V Supply
• 页
• K

• 464
• IS61LV6424-9TQ
• Integrated Circuit Solution Inc.
• 64k x 24 High-Speed CMOS Static RAM with 3.3 V Supply
• 页
• K

• 465
• IXEN60N120
• IXYS Corporation
• NPT3 IGBT
• 4页
• 98K

• 466
• IXEN60N120D1
• IXYS Corporation
• NPT3 IGBT
• 4页
• 98K

• 467
• IXER35N120D1
• IXYS Corporation
• NPT3 IGBT with Diode
• 4页
• 78K

• 468
• IXFK150N15
• IXYS Corporation
• HiPerFET Power MOSFET
• 2页
• 47K

• 469
• IXFX150N15
• IXYS Corporation
• HiPerFET Power MOSFET
• 2页
• 47K

• 470
• IDT71V65703S75BG
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 471
• IDT71V65703S75BGI
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 472
• IDT71V65703S75BQ
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 473
• IDT71V65703S75BQI
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 474
• IDT71V65703S75PF
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 475
• IDT71V65703S75PFI
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 476
• IDT71V65703S80BG
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 477
• IDT71V65703S80BGI
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 478
• IDT71V65703S80BQ
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 479
• IDT71V65703S80BQI
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 480
• IDT71V65703S80PF
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 481
• IDT71V65703S80PFI
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 482
• IDT71V65703S85BG
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 483
• IDT71V65703S85BGI
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 484
• IDT71V65703S85BQ
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 485
• IDT71V65703S85BQI
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 486
• IDT71V65703S85PF
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 487
• IDT71V65703S85PFI
• Integrated Device Technology, Inc.
• 256k x 36 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 488
• IDT71V65903S75BG
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 489
• IDT71V65903S75BGI
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 490
• IDT71V65903S75BQ
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 491
• IDT71V65903S75BQI
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 492
• IDT71V65903S75PF
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 493
• IDT71V65903S75PFI
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 494
• IDT71V65903S80BG
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 495
• IDT71V65903S80BGI
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 496
• IDT71V65903S80BQ
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 497
• IDT71V65903S80BQI
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 498
• IDT71V65903S80PF
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 499
• IDT71V65903S80PFI
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K

• 500
• IDT71V65903S85BG
• Integrated Device Technology, Inc.
• 512k x 18 3.3 V Synchronous ZBT SRAM 3.3 V I/O, Burst Counter Flow-Through Output
• 26页
• 493K